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SUD50N03-06P
Vishay Siliconix
SPECIFICATIONS (T J = 2 5 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
30
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
I GSS
I DSS
I D(on)
r DS(on)
g fs
V DS = 0 V, V GS = " 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 125 _ C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
V GS = 10 V, I D = 20 A, T J = 125 _ C
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
50
20
0.0053
0.0078
" 100
1
50
0.0065
0.0105
0.0095
nA
m A
A
W
S
Dynamic a
Input Capacitance
C iss
3100
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
565
255
pF
Gate Resistance
Total Gate Charge c
Gate-Source Charge c
R g
Q g
Q gs
V DS = 15 V, V GS = 4.5 V, I D = 50 A
1
1.9
21
10
3.1
30
W
nC
Gate-Drain Charge c
Q gd
7.5
Turn-On Delay Time c
t d(on)
12
20
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 15 V, R L = 0.3 W
I D ^ 50 A, V GEN = 10 V, R g = 2.5 W
12
30
10
20
45
15
ns
Source-Drain Diode Ratings and Characteristic (T C = 25 _ C)
Pulsed Current
I SM
100
A
Diode Forward Voltage b
Source-Drain Reverse Recovery Time
V SD
t rr
I F = 100 A, V GS = 0 V
I F = 50 A, di/dt = 100 A/ m s
1.2
35
1.5
70
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 m s, duty cycle v 2 %.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
200
Output Characteristics
V GS = 10 thru 6 V
100
Transfer Characteristics
160
120
80
5V
4V
80
60
40
T C = 125 _ C
40
20
25 _ C
0
3V
0
–55 _ C
0
2
4
6
8
10
0
1
2
3
4
5
www.vishay.com
2
V DS – Drain-to-Source Voltage (V)
V GS – Gate-to-Source Voltage (V)
Document Number: 71844
S-52636—Rev. D, 02-Jan-06
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